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Composite Transistors
XP1217
Silicon NPN epitaxial planer transistor
Unit: mm
2.10.1 0.425 1.250.1 0.425
0.20.05 0.12 - 0.02
+0.05
For switching/digital circuits
0.65
s Features
q q
Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
2.00.1
1 2 3
5
0.65
4
0.9 0.1
q
UN1217 x 2 elements
0.70.1
s Basic Part Number of Element
0.2
0 to 0.1
0.20.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25C)
Ratings 50 50 100 150 150 -55 to +150 Unit V V mA mW C C
1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2)
4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC-88A S-Mini Type Package (5-pin)
Marking Symbol: 9P Internal Connection
1 2 3 4 Tr1 5
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance
*1
(Ta=25C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = -2mA, f = 200MHz -30% 150 22 +30% 4.9 0.2 160 0.5 0.99 0.25 V V V MHz k min 50 50 0.1 0.5 0.01 460 typ max Unit V V A A mA
Ratio between 2 elements
1
Composite Transistors
PT -- Ta
250
XP1217
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (C)
IC -- VCE
120 100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10
hFE -- IC
400 VCE=10V
100
30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1
Forward current transfer ratio hFE
Collector current IC (mA)
Ta=25C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA
350 300 250 200 Ta=75C 150 100 50 0 25C -25C
80 0.4mA 0.3mA 0.2mA
60
Ta=75C
40
20
0.1mA
-25C 0.3 1 3 10 30 100
0 0 2 4 6 8 10 12
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
IO -- VIN
f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C
VIN -- IO
100 30 VO=0.2V Ta=25C
Collector output capacitance Cob (pF)
5
Output current IO (A)
4
Input voltage VIN (V)
1000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
3
2
1
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2

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